Field and polarity dependence of time-to-resistance increase in Fe-O films studied by constant voltage stress method
- Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
- Advanced Device Development Center, Matsushita Electric Ind. Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501 (Japan)
Constant voltage stress (CVS) was applied to Fe-O films prepared by a sputtering process to investigate a stress-induced resistance increase leading to a fundamental mechanism for switching behaviors. Under the CVS, an abrupt resistance increase was found for both stress polarities. A conduction mechanism after the resistance increase exhibited non-Ohmic transport. The time-to-resistance increase (t{sub r}) under the CVS was revealed to strongly depend on stress voltage as well as the polarity. From a polarity-dependent resistance increase determined by a time-zero measurement, the voltage and polarity-dependent t{sub r} were discussed on the basis of field- and structure-enhanced thermochemical reaction mechanisms.
- OSTI ID:
- 21175859
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 1; Other Information: DOI: 10.1063/1.3064127; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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