Preparation and Characterization of PZT Thin Films
- Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata-700032 (India)
- National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110012 (India)
In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)
- OSTI ID:
- 21149148
- Journal Information:
- AIP Conference Proceedings, Vol. 1029, Issue 1; Conference: International workshop on smart devices: Modeling of material systems, Madras, Chennai (India), 10-12 Jan 2008; Other Information: DOI: 10.1063/1.2971989; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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