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Title: Preparation and Characterization of PZT Thin Films

Abstract

In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)

Authors:
; ; ;  [1];  [2]
  1. Central Glass and Ceramic Research Institute, CSIR, 196 Raja S.C. Mullick Road, Kolkata-700032 (India)
  2. National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110012 (India)
Publication Date:
OSTI Identifier:
21149148
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1029; Journal Issue: 1; Conference: International workshop on smart devices: Modeling of material systems, Madras, Chennai (India), 10-12 Jan 2008; Other Information: DOI: 10.1063/1.2971989; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOMAIN STRUCTURE; ELECTRIC POTENTIAL; EPITAXY; FERROELECTRIC MATERIALS; GLASS; INTERFACES; LAYERS; PIEZOELECTRICITY; PLATINUM; PZT; SENSORS; SILICON; SPUTTERING; THICKNESS; THIN FILMS

Citation Formats

Bose, A, Sreemany, M, Bhattacharyya, D K, Sen, Suchitra, and Halder, S K. Preparation and Characterization of PZT Thin Films. United States: N. p., 2008. Web. doi:10.1063/1.2971989.
Bose, A, Sreemany, M, Bhattacharyya, D K, Sen, Suchitra, & Halder, S K. Preparation and Characterization of PZT Thin Films. United States. https://doi.org/10.1063/1.2971989
Bose, A, Sreemany, M, Bhattacharyya, D K, Sen, Suchitra, and Halder, S K. 2008. "Preparation and Characterization of PZT Thin Films". United States. https://doi.org/10.1063/1.2971989.
@article{osti_21149148,
title = {Preparation and Characterization of PZT Thin Films},
author = {Bose, A and Sreemany, M and Bhattacharyya, D K and Sen, Suchitra and Halder, S K},
abstractNote = {In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)},
doi = {10.1063/1.2971989},
url = {https://www.osti.gov/biblio/21149148}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1029,
place = {United States},
year = {Tue Jul 29 00:00:00 EDT 2008},
month = {Tue Jul 29 00:00:00 EDT 2008}
}