Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO{sub 2} strips imprinted by soft mold technique
- Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology, and Research, 3 Research Link, 117602 Singapore (Singapore)
- Magnequench Technology Center, 61 Science Park Road, 01-17 Galen, 117525 Singapore (Singapore)
- Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
Selective impurity free vacancy disordering of InAs/InGaAs quantum dot (QD) structures imprinted with sol-gel derived SiO{sub 2} strips via a polyethylene terepthalate soft mold has been investigated. Wavelength blueshift of up to 220 nm for areas capped with the sol-gel derived SiO{sub 2} is demonstrated. The imprinted SiO{sub 2} strips were used as hard mask for plasma etching of GaAs ridge waveguide structures and were found to have similar hardness as the SiO{sub 2} prepared by plasma-enhanced chemical vapor deposition. QD intermixing using sol-gel derived SiO{sub 2} with step-thickness profile was demonstrated, and a one-step SiO{sub 2} imprinting technique for multiple band gap QD intermixing is proposed.
- OSTI ID:
- 21124088
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 7; Other Information: DOI: 10.1063/1.2973164; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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