Wave-dispersive x-ray spectrometer for simultaneous acquisition of several characteristic lines based on strongly and accurately shaped Ge crystal
- Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
Si and Ge are widely used as analyzing crystals for x-rays. Drastic and accurate shaping of Si or Ge gives significant advance in the x-ray field, although covalently bonded Si or Ge crystals have long been believed to be not deformable to various shapes. Recently, we developed a deformation technique for obtaining strongly and accurately shaped Si or Ge wafers of high crystal quality, and the use of the deformed wafer made it possible to produce fine-focused x-rays. In the present study, we prepared a cylindrical Ge wafer with a radius of curvature of 50 mm, and acquired fluorescent x-rays simultaneously from four elements by combining the cylindrical Ge wafer with a position-sensitive detector. The energy resolution of the x-ray fluorescence spectrum was as good as that obtained using a flat single crystal, and its gain was over 100. The demonstration of the simultaneous acquisition of high-resolution x-ray fluorescence spectra indicated various possibilities of x-ray spectrometry, such as one-shot x-ray spectroscopy and highly efficient wave-dispersive x-ray spectrometers.
- OSTI ID:
- 21123821
- Journal Information:
- Review of Scientific Instruments, Vol. 79, Issue 3; Other Information: DOI: 10.1063/1.2898406; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CYLINDRICAL CONFIGURATION
DEFORMATION
ENERGY RESOLUTION
FLUORESCENCE SPECTROSCOPY
GAIN
GE SEMICONDUCTOR DETECTORS
GERMANIUM
MONOCRYSTALS
POSITION SENSITIVE DETECTORS
SEMICONDUCTOR MATERIALS
SHAPE
X RADIATION
X-RAY DETECTION
X-RAY FLUORESCENCE ANALYSIS
X-RAY SPECTROMETERS
X-RAY SPECTROSCOPY