A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography
- FOM-Institute for Plasma Physics Rijnhuizen, P.O. Box 1207, 3430 BE, Nieuwegein (Netherlands)
We present a kinetic simulation of the plasma formed by photoionization in the intense flux of an extreme ultraviolet lithography (EUVL) light source. The model is based on the particle-in-cell plus Monte Carlo approach. The photoelectric effect and ionization by electron collisions are included. The time evolution of the low density argon plasma is simulated during and after the EUV pulse and the ion-induced sputtering of the coating material of a normal incidence collector mirror is computed. The relation between the time and position at which the ions are created and their final energy is studied, revealing how the evolution and the properties of the sheath influence the amount of sputtered material. The influence of the gas pressure and the source intensity is studied, evaluating the behavior of Ar{sup +} and Ar{sup 2+} ions. A way to reduce the damage to the collector mirror is presented.
- OSTI ID:
- 21064490
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 1; Other Information: DOI: 10.1063/1.2829783; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Debris and radiation-induced damage effects on EUV nanolithography source collector mirror optics performance.
Enhancing extreme ultraviolet photons emission in laser produced plasmas for advanced lithography