Influence of High Nitrogen Flux on Crystal Quality of Plasma-Assisted MBE Grown GaN Layers Using Raman Spectroscopy: Part-II
- Department of Physics, Islamia University Bahawalpur (Pakistan)
- Deaprtment of Physics, LCUW, Lahore (Pakistan)
We have investigated lattice properties of plasma assisted MBE grown hexagonal GaN layers at varying nitrogen and gallium fluxes using Raman spectroscopy. Room temperature Raman spectra of Ga-rich layers and stoichiometric GaN are similar showing excitation modes at 434 cm-1, 567 cm-1 and 729 cm-1 identified as residual laser line, E{sub 2}{sup H} and A1(LO) mode, respectively. Similarity of Ga-rich and stoichiometric GaN layers is interpreted as the indication of comparable crystal quality of both GaN layers. In contrast, Raman scattering associated with N-rich GaN samples mere exhibit a broad band of excitations in the range of 250-650cm-1 leaving out A1(LO) mode. This typical observation along with intensity distribution of the peaks, is correlated with rough surface, bad crystal quality and high concentration of defects. Based on atomic displacement scheme, the broad band is identified as Ga- vacancies.
- OSTI ID:
- 21061694
- Journal Information:
- AIP Conference Proceedings, Vol. 909, Issue 1; Conference: ICSSST 2006: 2. international conference on solid state science and technology 2006, Kuala Terengganu (Malaysia), 4-6 Sep 2006; Other Information: DOI: 10.1063/1.2739834; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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