AFM Quantitative Morphological Analysis Of The Step Bunching Instability Formed On GaAs(110) During H-assisted MBE

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729792· OSTI ID:21055039

Crespillo, M L; Tejedor, P ^[1]

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1. Instituto de Ciencia de Materiales de Madrid, (ICMM-CSIC), C/ Sor Juana Ines de la Cruz, 3. Cantoblanco, 28049-Madrid (Spain)

Power Spectral Density (PSD) analysis of Atomic Force Microscopy (AFM) images has been applied to study the effect of H-assisted surface oxide cleaning on the step bunching and Bales-Zangwill instabilities that develop during homoepitaxial growth from molecular beams of Ga and As4 on vicinal GaAs(110) substrates at high temperatures and high As:Ga flux ratios, leading to the formation of a characteristic ripple pattern along the [001] tilt direction. As growth proceeds in the presence of chemisorbed H, step bunching gradually vanishes and the ripple pattern breaks up into an array of self-organized nanowires running along the [11-bar0] step edge direction.

• OSTI ID: 21055039
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729792; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHEMISORPTION
CLEANING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
HYDROGEN
IMAGES
INSTABILITY
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OXIDES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SPECTRAL DENSITY
SUBSTRATES
SURFACES