Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

Journal Article · Tue May 01 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2718278· OSTI ID:20982845

Gates, S M; Neumayer, D A; Sherwood, M H; Grill, A; Wang, X; Sankarapandian, M ^[1]

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1. IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH{sub 3} species, and lower k is shown to correlate with increased concentration of Si-CH{sub 3}. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH{sub x}) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH{sub x}) content and the presence of C=O and C=C functional groups.

• OSTI ID: 20982845
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 9; Other Information: DOI: 10.1063/1.2718278; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARBON COMPOUNDS
CHEMICAL VAPOR DEPOSITION
CROSS-LINKING
DIELECTRIC MATERIALS
FOURIER TRANSFORMATION
HEAT TREATMENTS
HYDROCARBONS
HYDROGEN COMPOUNDS
INFRARED SPECTRA
NUCLEAR MAGNETIC RESONANCE
OXYGEN COMPOUNDS
PERMITTIVITY
POROUS MATERIALS
SHRINKAGE
SILICON COMPOUNDS
SPECTROSCOPY
THIN FILMS