Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects
- Dipartimento di Scienze Fisiche ed Astronomiche, Universita di Palermo, via Archirafi 36, I-90123 Palermo (Italy)
We studied the effects induced by the ultraviolet-laser and -lamp exposure sequences on the twofold coordinated germanium (=Ge{sup {center_dot}}{sup {center_dot}}) and the H(II) center (=Ge{sup {center_dot}}-H) in silica. The H(II) centers, generated after the first laser irradiation stage by the trapping of atomic hydrogen H{sup 0} at the (=Ge{sup {center_dot}}{sup {center_dot}}), are destroyed by the subsequent lamp exposure with efficiency depending on photon energy. The H(II) photodestruction is activated from {approx}4 eV, and its cross section is here quantitatively measured, so giving the absorption profile of this center. Consistent with the observed correlated recovering of (=Ge{sup {center_dot}}{sup {center_dot}}), the photodestruction is mainly due to the photolysis of the Ge-H bond leading to hydrogen detrapping.
- OSTI ID:
- 20951538
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 75, Issue 23; Other Information: DOI: 10.1103/PhysRevB.75.233201; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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