Damage production in GaAs and GaAsN induced by light and heavy ions
- Accelerator Laboratory, University of Helsinki, P.O. Box 43, Helsinki FIN-00014 (Finland)
Ion irradiation causes damage in semiconductor crystal structures and affects charge carrier dynamics. We have studied the damage production by high-energy (100 keV-10 MeV) H, He, Ne, and Ni ions in GaAs and GaAs{sub 90}N{sub 10} using molecular dynamics computer simulations. We find that the heavier Ne and Ni ions produce a larger fraction of damage in large clusters than H and He. These large clusters are either in the form of amorphous zones or (after room-temperature aging or high-temperature annealing) in the form of vacancy and antisite clusters. The total damage production in GaAs and GaAs{sub 90}N{sub 10} is found to be practically the same for all the ions. A clearly smaller fraction of the damage in GaAs{sub 90}N{sub 10} compared to GaAs is in large clusters, however. Our results indicate that experimentally observed differences in charge carrier lifetimes between light and heavy ion irradiations, and before and after annealing, can be understood in terms of the large defect clusters. An increasing amount of damage in large clusters decreases the carrier decay time.
- OSTI ID:
- 20884694
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 5; Other Information: DOI: 10.1063/1.2336306; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
CARRIER LIFETIME
CHARGE CARRIERS
COMPUTERIZED SIMULATION
GALLIUM ARSENIDES
GALLIUM NITRIDES
HELIUM IONS
HYDROGEN IONS
ION BEAMS
KEV RANGE 100-1000
MEV RANGE 01-10
MOLECULAR DYNAMICS METHOD
NEON IONS
NICKEL IONS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES