Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces

Journal Article · Sat Jul 01 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2214222· OSTI ID:20879966

Plis, E; Annamalai, S; Posani, K T; Krishna, S; Rupani, R A; Ghosh, S ^[1]

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1. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 Hz)

• OSTI ID: 20879966
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 1; Other Information: DOI: 10.1063/1.2214222; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTALLOGRAPHY
EFFICIENCY
ELECTRICAL PROPERTIES
FABRICATION
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
NOISE
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPECTRAL DENSITY
STRAINS
SUPERLATTICES
X RADIATION
X-RAY DIFFRACTION