Characterization of atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs interface improved by NH{sub 3} plasma pretreatment
- Department of Microelectronics, Fudan University, Shanghai 200433 (China)
Al{sub 2}O{sub 3} thin films were deposited by atomic layer deposition on HF-cleaned and NH{sub 3} plasma-treated GaAs surfaces, respectively. The precursors used for Al{sub 2}O{sub 3} films are trimethylaluminum and water. Effects of NH{sub 3} plasma pretreatment on the electrical and structural properties of Al{sub 2}O{sub 3}/GaAs interface were investigated by C-V measurements, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy measurements. The C-V measurements showed that the electrical property is improved after NH{sub 3} plasma pretreatment. X-ray photo electron spectroscopy analyses confirmed that GaAs oxides and elemental As are greatly decreased and the GaAs surface can be efficiently protected during NH{sub 3} plasma pretreatment and atomic layer deposition of Al{sub 2}O{sub 3}.
- OSTI ID:
- 20860993
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 15; Other Information: DOI: 10.1063/1.2363145; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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