Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2014940· OSTI ID:20714075

Mok, K R.C.; Jaraiz, M; Martin-Bragado, I; Rubio, J E; Castrillo, P; Pinacho, R; Barbolla, J; Srinivasan, M P ^[1]

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1. Departamento de Electricidad y Electronica, Universidad de Valladolid, Escuela Tecnica Superior de Ingenieros de Telecommunicacion (ETSIT) Campus Miguel Delibes, 47011 Valladolid, Spain and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)

We introduce a model for damage accumulation up to amorphization, based on the ion-implant damage structures commonly known as amorphous pockets. The model is able to reproduce the silicon amorphous-crystalline transition temperature for C, Si, and Ge ion implants. Its use as an analysis tool reveals an unexpected bimodal distribution of the defect population around a characteristic size, which is larger for heavier ions. The defect population is split in both size and composition, with small, pure interstitial and vacancy clusters below the characteristic size, and amorphous pockets with a balanced mixture of interstitials and vacancies beyond that size.

• OSTI ID: 20714075
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 4; Other Information: DOI: 10.1063/1.2014940; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARBON IONS
GERMANIUM IONS
HEAVY IONS
INTERSTITIALS
ION BEAMS
ION IMPLANTATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON IONS
TRANSITION TEMPERATURE
VACANCIES