Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- European Synchrotron Radiation Facility, Boite Postale 220, F-38043 Grenoble Cedex (France)
- Max-Planck-Institute for Solid State Physics, D-70569 Stuttgart (Germany)
- Institute for Semiconductor Physics, Johannes Kepler Universitaet Linz, A-4040 Linz (Austria)
The influence of growth temperature in the regime of dome formation in Stranski-Krastanow growth is studied systematically on a series of Ge on Si(001) samples. A combination of complementary x-ray scattering methods is applied, in order to resolve the island size, their strain state, and the composition distribution. The composition is determined using anomalous x-ray diffraction at high momentum transfer in combination with atomic force microscopy and from x-ray reciprocal space mapping. For growth temperatures between 620 and 840 deg. C, the maximum Ge content of the as-grown islands decreases from about 70 to about 22%. The results are corroborated by a selective etching study of the Ge islands.
- OSTI ID:
- 20665055
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 3; Other Information: DOI: 10.1103/PhysRevB.71.035326; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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