Growth of Ga-doped ZnO nanowires by two-step vapor phase method
- Physics Department and Electron Spin Science Center, Pohang University of Science and Technology, San 31, Hyoja-Dong, Namku, Kyungbuk 790-784 (Korea, Republic of)
A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300-500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E{sub 1L} mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (Ga{sub Zn}). The formation mechanism of Zn{sub 1-x}Ga{sub x}O nanowires/ZnO heterostructures is proposed.
- OSTI ID:
- 20637058
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 13; Other Information: DOI: 10.1063/1.1888035; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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