Optical characterization of SiC wafers
Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. They have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. They have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. They also present results on time-resolved photoluminescence spectra of n-type SiC wafers.
- Research Organization:
- Rutgers Univ., Piscataway, NJ (US)
- Sponsoring Organization:
- Rutgers Research Council; Petroleum Research Fund; US Department of the Navy, Office of Naval Research (ONR)
- OSTI ID:
- 20104710
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/08/1999; Other Information: PBD: 1999; Related Information: In: Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572, by Binari, S.C.; Burk, A.A.; Melloch, M.R.; Nguyen, C. [eds.], 575 pages.
- Country of Publication:
- United States
- Language:
- English
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