Single event effects in static and dynamic registers in a 0.25{micro}m CMOS technology
The authors have studied Single Event Effects in static and dynamic registers designed in a quarter micron CMOS process. In the design, they systematically used guard rings and enclosed (edgeless) transistor geometry to improve the total dose tolerance. This design technique improved both the SEL and SEU sensitivity of the circuits. Using SPICE simulations, the measured smooth transition of the cross-section curve between LET threshold and saturation has been traced to the presence of four different upset modes, each corresponding to a different critical charge and sensitive area. A new architecture to protect the content of storage cells has been developed, and a threshold LET around 89 MeVcm{sup 2}mg{sup {minus}1} has been measured for this cell at a power supply voltage of 2 V.
- Research Organization:
- CERN, Geneva (CH)
- OSTI ID:
- 20014696
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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