skip to main content

SciTech ConnectSciTech Connect

Title: Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
14620
Report Number(s):
ORNL/CP-105048
TRN: AH200129%%344
DOE Contract Number:
AC05-96OR22464
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 14 Nov 1999
Research Org:
Oak Ridge National Lab., TN (US)
Sponsoring Org:
USDOE Office of Science (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BONDING; NITROGEN; OXIDATION; PROBES; SPECTRA; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY INTERFACE STRUCTURE; INTERFACE TRAPS; NITROGEN; OXIDATION