Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface
Conference
·
OSTI ID:14620
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the Sic-SiO{sub 2} interface. (a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; (b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and (c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 14620
- Report Number(s):
- ORNL/CP-105048; TRN: AH200129%%344
- Resource Relation:
- Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 14 Nov 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atomic-scale structures in complex solids by Z-contrast STEM and first-principles theory
Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers
Atomic structure of Si-SiO{sub 2} interface
Conference
·
Sun Feb 01 00:00:00 EST 1998
·
OSTI ID:14620
+2 more
Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers
Journal Article
·
Sat Nov 01 00:00:00 EDT 2014
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:14620
+5 more
Atomic structure of Si-SiO{sub 2} interface
Conference
·
Tue Apr 01 00:00:00 EST 1997
·
OSTI ID:14620