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Title: Generalized multiband typical medium dynamical cluster approximation: Application to (Ga,Mn)N

Journal Article · · Physical Review B
 [1];  [2];  [3];  [1];  [4];  [5];  [6];  [7];  [1];  [1]
  1. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy, Center for Computation and Technology
  2. RWTH Aachen Univ. (Germany). Inst. of Inorganic Chemistry
  3. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
  4. Gwangju Inst. of Science and Technology (GIST), Gwangju (Korea). Dept. of Physics and Photon Science
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences, Computer Science and Mathematics Division
  6. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  7. Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore (India). Theoretical Sciences Unit

We generalize the multiband typical medium dynamical cluster approximation and the formalism introduced by Blackman, Esterling, and Berk so that it can deal with localization in multiband disordered systems with both diagonal and off-diagonal disorder with complicated potentials. We also introduce an ansatz for the momentum-resolved typical density of states that greatly improves the numerical stability of the method while preserving the independence of scattering events at different frequencies. Starting from the first-principles effective Hamiltonian, we apply this method to the diluted magnetic semiconductor Ga 1 - x Mn x N , and find the impurity band is completely localized for Mn concentrations x < 0.03 , while for 0.03 < x < 0.10 the impurity band has delocalized states but the chemical potential resides at or above the mobility edge. So, the system is always insulating within the experimental compositional limit ( x ≈ 0.10 ) due to Anderson localization. But, for 0.03 < x < 0.10 hole doping could make the system metallic, allowing double-exchange mediated, or enhanced, ferromagnetism. Finally, this developed method is expected to have a large impact on first-principles studies of Anderson localization.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725; AC02-98CH10886
OSTI ID:
1393904
Alternate ID(s):
OSTI ID: 1338088
Journal Information:
Physical Review B, Vol. 94, Issue 22; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

References (62)

Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs journal February 2010
Role of vacancies in metal–insulator transitions of crystalline phase-change materials journal October 2012
Phase diagram and critical behavior of the random ferromagnet Ga 1 x Mn x N journal August 2013
Can Disorder Alone Destroy the e g Hole Pockets of Na x CoO 2 ? A Wannier Function Based First-Principles Method for Disordered Systems journal February 2011
Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN journal August 2001
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors journal April 2001
Absence of Diffusion in Certain Random Lattices journal March 1958
Hidden order revealed journal April 2011
Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As journal November 2009
Study of multiband disordered systems using the typical medium dynamical cluster approximation journal November 2015
Generalized Locator—Coherent-Potential Approach to Binary Alloys journal October 1971
Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxy
  • Novikov, S. V.; Edmonds, K. W.; Zhao, L. X.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 3 https://doi.org/10.1116/1.1868699
journal January 2005
What is the Valence of Mn in Ga 1 x Mn x N ? journal November 2015
Insulator-to-Metal Transition in Sulfur-Doped Silicon journal April 2011
Study of off-diagonal disorder using the typical medium dynamical cluster approximation journal September 2014
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors journal February 2000
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer journal February 1986
Magnetic properties of n -GaMnN thin films journal May 2002
Demonstration of the spin solar cell and spin photodiode effect journal July 2013
Paramagnetic Ni Cu Alloys: Electronic Density of States in the Coherent-Potential Approximation journal April 1970
Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions journal March 1979
Statistics and scaling in disordered mesoscopic electron systems journal March 1998
Origin of low-temperature magnetic ordering in Ga 1 x Mn x N journal May 2012
Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions journal October 2004
Anderson localization of electrons in single crystals: Li x Fe 7 Se 8 journal February 2016
Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band journal February 2012
Spintronics: Fundamentals and applications journal April 2004
Magnetic and transport characteristics on high Curie temperature ferromagnet of Mn-doped GaN journal January 2002
Battle of the bands journal April 2012
Typical medium dynamical cluster approximation for the study of Anderson localization in three dimensions journal February 2014
Distribution of local densities of states, order parameter function, and critical behavior near the Anderson transition journal January 1994
Theory of ferromagnetic (III,Mn)V semiconductors journal August 2006
Multifractal Analysis of Broadly-Distributed Observables at Criticality journal April 1994
Proposal for a spin-polarized solar battery journal September 2001
Electric-field control of ferromagnetism journal December 2000
Single-Site Approximations in the Electronic Theory of Simple Binary Alloys journal November 1968
Magnetization vector manipulation by electric fields journal September 2008
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes journal March 1994
First-principles theory of dilute magnetic semiconductors journal May 2010
Typical medium theory of Anderson localization: A local order parameter approach to strong-disorder effects journal April 2003
Ferromagnetic semiconductors: moving beyond (Ga,Mn)As journal March 2005
Magnetoelectronics journal November 1998
Exchange interactions in diluted magnetic semiconductors journal November 2004
Disorder-induced localization in crystalline phase-change materials journal January 2011
Room temperature ferromagnetic properties of (Ga, Mn)N journal November 2001
Growth of GaN and AlGaN for UV/blue p-n junction diodes journal March 1993
Coherent-Potential Model of Substitutional Disordered Alloys journal April 1967
Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As journal May 2008
Spintronics journal January 2001
Proposal for a spin-polarized solar battery text January 2001
Demonstration of the spin solar cell and spin photodiode effect text January 2013
Spintronics: fundamentals and applications text January 2004
Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As text January 2008
Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As text January 2009
Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs text January 2010
Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band text January 2012
Study of off-diagonal disorder using the typical medium dynamical cluster approximation text January 2014
Study of multiband disordered systems using the typical medium dynamical cluster approximation text January 2015
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors text January 2000
A proposal for a spin-polarized solar battery text January 2001
Typical medium theory of Anderson localization: A local order parameter approach to strong disorder effects text January 2001
Theory of ferromagnetic (III,Mn)V semiconductors text January 2006

Cited By (5)

The potential and challenges of time-resolved single-photon detection based on current-carrying superconducting nanowires journal October 2019
Locally self-consistent embedding approach for disordered electronic systems journal August 2019
Ab initio typical medium theory of substitutional disorder journal January 2020
Systematic Quantum Cluster Typical Medium Method for the Study of Localization in Strongly Disordered Electronic Systems journal November 2018
Systematic Quantum Cluster Typical Medium Method For the Study of Localization in Strongly Disordered Electronic Systems text January 2018

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