Magnetic field stabilized electron-hole liquid in indirect-band-gap
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
An electron-hole liquid (EHL), a condensed liquidlike phase of free electrons and holes in a semiconductor, presents a unique system for exploring quantum many-body phenomena. And while the behavior of EHLs is generally understood, less attention has been devoted to systematically varying the onset of their formation and resulting properties. Here, we report on an experimental approach to tune the conditions of formation and characteristics using a combination of low excitation densities and high magnetic fields up to 90 T. Demonstration of this approach was carried out in indirect-band-gap A l 0.387 G a 0.613 As . EHL droplets can be nucleated from one of two multiexciton complex states depending on the applied excitation density. Furthermore, the excitation density influences the carrier density of the EHL at high magnetic fields, where filling of successive Landau levels can be controlled. The ability to manipulate the formation pathway, temperature, and carrier density of the EHL phase under otherwise fixed experimental conditions makes our approach a powerful tool for studying condensed carrier phases in further detail.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC52-06NA25396; AC36-08GO28308
- OSTI ID:
- 1364533
- Alternate ID(s):
- OSTI ID: 1239708
- Report Number(s):
- LA-UR-15-28145; PRBMDO
- Journal Information:
- Physical Review B, Vol. 93, Issue 7; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Effect of Sr doping on the magnetic exchange interactions in manganites of type
Magnetic Field Stabilized Electron-Hole Liquid in Indirect-Band-Gap AlxGa1-xAs