Defects in laser crystals of rare-earth aluminum and gallium garnets

Journal Article · Thu Dec 01 00:00:00 EST 1994 · Inorganic Materials

OSTI ID:135590

Vorob`ev, Yu P; Goncharov, O Yu ^[1]

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1. Physicotechnical Institute, Izhevsk (Russian Federation)

Using thermodynamic and crystallochemical analysis of garnets R{sub 3}Ga{sub 5}O{sub 12}(R=Sm - Lu, Y) and R{sub 3}Al{sub 5}O{sub 12} (R = Gd - Lu, Y) and their solid solutions, we characterized point defects present in their structure and, for the first time, estimated their contents. We showed that the garnets under consideration contain cationic defects and oxygen vacancies: (1) In aluminum garnets R{sub 3}Al{sub 5}O{sub 12}, improper-valence ions form at octahedral sites. (2) In gallium garnets R{sub 3}Ga{sub 5}O{sub 12} and Ga-containing solid solutions, there are Ga vacancies at octahedral sites. (3) In Dy{sub 3}(Ga{sub c}Al{sub 1-c}){sub 5}O{sub 12} solid solutions, in addition to the above-mentioned defects typical of gallium garnets, antistructural, substitutional defects (Ga{sup 3+}{sub IV}) are present. The Ga{sup 3+}ions occupy preferentially octahedra; that is, they exhibit a higher affinity for octahedral coordination than Alk{sup 3+} ions, in agreement with Goldschmidt`s crystallochemical approach. The refined solid-solution ranges for R{sub 3}Ga{sub c}Al{sub 1-c}{sub 5}O{sub 12}(R=Nd,Sm,Eu,Gd) are 0.75 {le}c{le} 1 for Nd, 0.5 {le}c{le} 1 for Sm, 0.4 {le}c{le} 1 for Eu, and 0.25 {le}c{le} 1 for Gd.

• OSTI ID: 135590
• Journal Information: Inorganic Materials, Vol. 30, Issue 12; Other Information: PBD: Dec 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 12, 1576-1583(1994)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
RARE EARTH COMPOUNDS
DEFECTS
ELECTRONIC STRUCTURE
THERMODYNAMIC PROPERTIES
GARNETS
TEMPERATURE DEPENDENCE
SOLID STATE LASERS
STABILITY
VACANCIES
SOLID SOLUTIONS
SOLUBILITY