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Title: Lattice distortion and electron charge redistribution induced by defects in graphene

Journal Article · · Carbon
 [1];  [2];  [3];  [4];  [4]
  1. Jilin Univ., Jilin (People's Republic of China); Ames Lab. and Iowa State Univ., Ames, IA (United States)
  2. Jilin Univ., Jilin (People's Republic of China); Qingdao Univ., Shandong (People's Republic of China)
  3. Jilin Univ., Jilin (People's Republic of China)
  4. Ames Lab. and Iowa State Univ., Ames, IA (United States)

Lattice distortion and electronic charge localization induced by vacancy and embedded-atom defects in graphene were studied by tight-binding (TB) calculations using the recently developed three-center TB potential model. We showed that the formation energies of the defects are strongly correlated with the number of dangling bonds and number of embedded atoms, as well as the magnitude of the graphene lattice distortion induced by the defects. Lastly, we also showed that the defects introduce localized electronic states in the graphene which would affect the electron transport properties of graphene.

Research Organization:
Ames Lab., Ames, IA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
21173096; 2013CB834801; AC02-07CH11358
OSTI ID:
1335040
Alternate ID(s):
OSTI ID: 1358883
Report Number(s):
IS-J-9073; PII: S0008622316307825
Journal Information:
Carbon, Vol. 110, Issue C; ISSN 0008-6223
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science

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Cited By (3)

Electronic structure of electron-irradiated graphene and effects of hydrogen passivation journal September 2018
Interactions of metal phthalocyanines with Stone-Wales defects on single-walled carbon nanotubes: A theoretical study journal January 2020
Structure-properties relations in graphene derivatives and metamaterials obtained by atomic-scale modeling journal June 2019

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