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Title: Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

Journal Article · · Physical Review B

Sponsoring Organization:
USDOE
OSTI ID:
1332385
Journal Information:
Physical Review B, Journal Name: Physical Review B Vol. 94 Journal Issue: 19; ISSN 2469-9950
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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Large-Gap Quantum Spin Hall Insulators in Tin Films journal September 2013
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Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs journal September 2015
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A review on silicene — New candidate for electronics journal January 2012
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Large-gap quantum spin Hall states in decorated stanene grown on a substrate journal August 2015
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Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures journal October 2014
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