skip to main content

Title: Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 $${}^{\circ}$$ C

In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 degrees C. The temperature-dependent J01 and J02 dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 degrees C. As the temperature is increased, we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ~30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-temperature solar cell operation.
ORCiD logo ; ; ; ; ;
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2156-3381
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Journal of Photovoltaics; Journal Volume: 6; Journal Issue: 5
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
U.S. Department of Energy, Advanced Research Projects Agency-Energy (ARPA-E) FOCUS Program
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; temperature measurement; photovoltaic cells; gallium arsenide; temperature; photovoltaic systems; temperature sensors