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Title: Varactor with integrated micro-discharge source

Patent ·
OSTI ID:1329304

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of the np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,472,689
Application Number:
14/843,060
OSTI ID:
1329304
Resource Relation:
Patent File Date: 2015 Sep 02
Country of Publication:
United States
Language:
English

References (7)

Varactor diode patent April 1990
Varactor with electrostatic barrier patent August 1998
High performance varactor diodes patent October 2004
MOS varactor with segmented gate doping patent June 2009
High performance tapered varactor patent July 2009
Mixed-gate metal-oxide-semiconductor varactors patent August 2012
Varactor that applies bias voltage to two through wafer vias to determine capacitance of depletion region capacitor formed between the two through wafer vias patent July 2015

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