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Title: Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

Authors:
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Publication Date:
OSTI Identifier:
1328021
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 45; Journal Issue: 4
Publisher:
Springer
Research Org:
Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
Sponsoring Org:
INDUSTRY
Country of Publication:
United States
Language:
ENGLISH