Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers
Journal Article
·
· Journal of Electronic Materials
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- INDUSTRY
- OSTI ID:
- 1328021
- Journal Information:
- Journal of Electronic Materials, Vol. 45, Issue 4; ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- ENGLISH
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