High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity
- Vanderbilt Univ., Nashville, TN (United States); University of Memphis, TN (United States)
- SuperSTEM Laboratory, Daresbury (United Kingdom); Oxford University (United Kingdom)
- Complutense University of Madrid (Spain)
- Vanderbilt Univ., Nashville, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Complutense University of Madrid (Spain); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725; FG02-09ER46554; AC02-06CH11357; AC02-05CH11231; DMR130121; AC02-06CH11357
- OSTI ID:
- 1311245
- Alternate ID(s):
- OSTI ID: 1352661; OSTI ID: 1456954; OSTI ID: 1597786
- Journal Information:
- Advanced Materials Interfaces, Vol. 3, Issue 16; ISSN 2196-7350
- Publisher:
- Wiley-VCHCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Interface-induced multiferroism by design in complex oxide superlattices
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journal | June 2017 |
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