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Title: Low profile, highly configurable, current sharing paralleled wide band gap power device power module

Patent ·
OSTI ID:1303252
; ; ; ; ; ;

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.

Research Organization:
Cree Fayetteville, Inc. Fayetteville, AR (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0006429
Assignee:
Cree Fayetteville, Inc. (Fayetteville, AR)
Patent Number(s):
9,426,883
Application Number:
14/609,629
OSTI ID:
1303252
Resource Relation:
Patent File Date: 2015 Jan 30
Country of Publication:
United States
Language:
English

References (5)

Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die patent October 2001
Power module and method of fabricating the same patent March 2010
Double-sided package for power module patent August 2010
Package for high power density devices patent September 2011
Wafer scale package for high power devices patent February 2013

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42 ENGINEERING
24 POWER TRANSMISSION AND DISTRIBUTION