Materials Data on Mn(GaS2)2 by Materials Project
MnGa2S4 crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are six inequivalent Mn2+ sites. In the first Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with ten GaS4 tetrahedra and edges with three MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.56–2.68 Å. In the second Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with eight GaS4 tetrahedra and edges with five MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.53–2.70 Å. In the third Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with ten GaS4 tetrahedra and edges with three MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.56–2.65 Å. In the fourth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with six GaS4 tetrahedra and edges with six MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.51–2.63 Å. In the fifth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with six GaS4 tetrahedra and edges with six MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.52–2.63 Å. In the sixth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with eight GaS4 tetrahedra and edges with five MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.52–2.77 Å. There are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 56–63°. There are a spread of Ga–S bond distances ranging from 2.22–2.35 Å. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 53–62°. There are a spread of Ga–S bond distances ranging from 2.26–2.37 Å. In the third Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 51–62°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the fourth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 55–63°. There are a spread of Ga–S bond distances ranging from 2.23–2.35 Å. In the fifth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 55–62°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the sixth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 56–63°. There are a spread of Ga–S bond distances ranging from 2.22–2.36 Å. In the seventh Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–61°. There are one shorter (2.25 Å) and three longer (2.33 Å) Ga–S bond lengths. In the eighth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 55–61°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the ninth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–62°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the tenth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 52–62°. There are a spread of Ga–S bond distances ranging from 2.26–2.37 Å. In the eleventh Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 52–62°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the twelfth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 57–62°. There are a spread of Ga–S bond distances ranging from 2.23–2.36 Å. There are twenty-four inequivalent S2- sites. In the first S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the second S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the third S2- site, S2- is bonded in a trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the fourth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SMn3Ga trigonal pyramids. In the fifth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the sixth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SMn3Ga tetrahedra. In the seventh S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the eighth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the ninth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the tenth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the eleventh S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the twelfth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SMn3Ga trigonal pyramids. In the thirteenth S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the fourteenth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the fifteenth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SMn3Ga trigonal pyramids. In the sixteenth S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the seventeenth S2- site, S2- is bonded in a trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the eighteenth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SMn3Ga trigonal pyramids. In the nineteenth S2- site, S2- is bonded in a trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the twentieth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the twenty-first S2- site, S2- is bonded in a rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the twenty-second S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the twenty-third S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the twenty-fourth S2- site, S2- is bonded in a distorted trigonal planar geometry to one Mn2+ and two Ga3+ atoms.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Contributing Organization:
- MIT; UC Berkeley; Duke; U Louvain
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- OSTI ID:
- 1278126
- Report Number(s):
- mp-622375
- Resource Relation:
- Related Information: https://materialsproject.org/citing
- Country of Publication:
- United States
- Language:
- English
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