Materials Data on GaSi4H30C10Cl by Materials Project
Si(Si(CH3)3)3GaCH3Cl crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four silicon molecules, twelve trimethylsilyl radical molecules, and two GaCH3Cl clusters. In each GaCH3Cl cluster, Ga3+ is bonded in a distorted trigonal non-coplanar geometry to one C4- and two equivalent Cl1- atoms. The Ga–C bond length is 1.98 Å. There are one shorter (2.45 Å) and one longer (2.47 Å) Ga–Cl bond lengths. C4- is bonded in a tetrahedral geometry to one Ga3+ and three H1+ atoms. All C–H bond lengths are 1.10 Å. There are three inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. In the second H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. In the third H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. Cl1- is bonded in an L-shaped geometry to two equivalent Ga3+ atoms.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Contributing Organization:
- MIT; UC Berkeley; Duke; U Louvain
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- OSTI ID:
- 1277409
- Report Number(s):
- mp-604970
- Resource Relation:
- Related Information: https://materialsproject.org/citing
- Country of Publication:
- United States
- Language:
- English
Similar Records
Materials Data on Mo2P4H36C12Cl4O5 by Materials Project
Materials Data on ZnSi4H35C13ClO by Materials Project