Self-heating and failure in scalable graphene devices

Beechem, Thomas E.; Shaffer, Ryan A.; Nogan, John; Ohta, Taisuke; Hamilton, Allister B.; McDonald, Anthony E.; Howell, Stephen W.

doi:10.1038/srep26457

Title: Self-heating and failure in scalable graphene devices

Journal Article · Thu Jun 09 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep26457· OSTI ID:1262367

Beechem, Thomas E. ^[1]; Shaffer, Ryan A. ^[1]; Nogan, John ^[1]; Ohta, Taisuke ^[1]; Hamilton, Allister B. ^[1]; McDonald, Anthony E. ^[1]; Howell, Stephen W. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. Furthermore, the discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1262367

Alternate ID(s):: OSTI ID: 1338306

Report Number(s):: SAND-2016-3093J; SAND-2015-10741J; srep26457

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 19 works

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