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Title: Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4954904· OSTI ID:1266707

For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. In conclusion, this uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1266707
Alternate ID(s):
OSTI ID: 1259369
Report Number(s):
NREL/JA-5900-66346; APPLAB
Journal Information:
Applied Physics Letters, Vol. 108, Issue 26; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 27 works
Citation information provided by
Web of Science

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Cited By (7)

Obtaining Large Columnar CdTe Grains and Long Lifetime on Nanocrystalline CdSe, MgZnO, or CdS Layers journal January 2018
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal November 2016
Point defect engineering in thin-film solar cells journal June 2018
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping journal September 2018
The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal June 2017
Grain boundary passivation by CdCl2 treatment in CdTe solar cells revealed by Kelvin probe force microscopy journal October 2018
Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells journal September 2018