Band structure characterization of WS2 grown by chemical vapor deposition

Tanabe, Iori; Gomez, Michael; Coley, William C.; Le, Duy; Echeverria, Elena M.; Stecklein, Gordon; Kandyba, Viktor; Balijepalli, Santosh K.; Klee, Velveth; Nguyen, Ariana E.; Preciado, Edwin; Lu, I-Hsi; Bobek, Sarah; Barroso, David; Martinez-Ta, Dominic; Barinov, Alexei; Rahman, Talat S.; Dowben, Peter A.; Crowell, Paul A.; Bartels, Ludwig

doi:10.1063/1.4954278

Title: Band structure characterization of WS₂ grown by chemical vapor deposition

Journal Article · Mon Jun 20 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4954278· OSTI ID:1467573

Tanabe, Iori ^[1]; Gomez, Michael ^[2]; Coley, William C. ^[2];

^[3]; Echeverria, Elena M. ^[1]; Stecklein, Gordon ^[4]; Kandyba, Viktor ^[5]; Balijepalli, Santosh K. ^[5]; Klee, Velveth ^[2]; Nguyen, Ariana E. ^[2]; Preciado, Edwin ^[2]; Lu, I-Hsi ^[2]; Bobek, Sarah ^[2]; Barroso, David ^[2]; Martinez-Ta, Dominic ^[2]; Barinov, Alexei ^[5]; Rahman, Talat S. ^[3];

^[1]; Crowell, Paul A. ^[4]; Bartels, Ludwig ^[2]

Univ. of Nebraska, Lincoln, NE (United States)
Univ. of California—Riverside, Riverside, CA (United States)
Univ. of Central Florida, Orlando, FL (United States)
Univ. of Minnesota, Minneapolis, MN (United States)
Elettra-Sincrotrone Trieste, Trieste (Italy)

Growth by chemical vapor deposition (CVD) leads to multilayer WS₂ of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K¯ point to be 420 ± 20 meV with a hole effective mass of –0.35 ± 0.02 m_e for the upper spin-orbit component (the branch closer to the Fermi level) and –0.43 ± 0.07 m_e for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. In conclusion, the top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS₂ material.

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Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-07ER15842

OSTI ID:: 1467573

Alternate ID(s):: OSTI ID: 1258326

Journal Information:: Applied Physics Letters, Vol. 108, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 32 works

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74 ATOMIC AND MOLECULAR PHYSICS
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band structure
majority carrier
spin-orbit coupling
effective mass

Title: Band structure characterization of WS2 grown by chemical vapor deposition

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Title: Band structure characterization of WS₂ grown by chemical vapor deposition