Rapid‐phase transitions of GeTe‐Sb 2 Te 3 pseudobinary amorphous thin films for an optical disk memory
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March 1991 |
Erratum: Phase-change materials for rewriteable data storage
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November 2007 |
Disorder-induced localization in crystalline phase-change materials
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January 2011 |
Phase change materials
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February 2012 |
Design Rules for Phase-Change Materials in Data Storage Applications
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April 2011 |
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
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June 2011 |
An optoelectronic framework enabled by low-dimensional phase-change films
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July 2014 |
Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials and GeTe
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December 2007 |
Structural role of vacancies in the phase transition of Ge Sb Te memory materials
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September 2011 |
Atomistic origins of the phase transition mechanism in Ge2Sb2Te5
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December 2009 |
Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material
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October 2002 |
Structures of stable and metastable Ge 2 Sb 2 Te 5 , an intermetallic compound in GeTe–Sb 2 Te 3 pseudobinary systems
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November 2004 |
Insights into the structure of the stable and metastable compounds
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December 2008 |
Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
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December 2000 |
Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase
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July 2000 |
Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals
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May 2008 |
Specific Heat of (GeTe) x (Sb 2 Te 3 ) 1– x Phase-Change Materials: The Impact of Disorder and Anharmonicity
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March 2014 |
Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films
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February 2016 |
Direct imaging of crystal structure and defects in metastable Ge 2 Sb 2 Te 5 by quantitative aberration-corrected scanning transmission electron microscopy
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March 2014 |
Understanding the phase-change mechanism of rewritable optical media
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September 2004 |
Building blocks of amorphous
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August 2007 |
The role of vacancies and local distortions in the design of new phase-change materials
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December 2006 |
Octahedral structure of liquid alloy: First-principles molecular dynamics study
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February 2007 |
Density functional study of amorphous, liquid and crystalline Ge 2 Sb 2 Te 5 : homopolar bonds and/or AB alternation?
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September 2008 |
Local structure of liquid Ge 1 Sb 2 Te 4 for rewritable data storage use
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April 2008 |
Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
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March 2008 |
Ultrafast phase-change logic device driven by melting processes
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September 2014 |
Integrated all-photonic non-volatile multi-level memory
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September 2015 |
Pulse number control of electrical resistance for multi-level storage based on phase change
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August 2007 |
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state
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July 2011 |
Estimation of amorphous fraction in multilevel phase-change memory cells
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September 2010 |
Chemically sensitive structure-imaging with a scanning transmission electron microscope
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December 1988 |
Role of vacancies in metal–insulator transitions of crystalline phase-change materials
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October 2012 |
Structural investigation of A high-speed phase-change material
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March 2004 |
In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films
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September 2006 |
Photoassisted amorphization of the phase-change memory alloy
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July 2010 |
Self-Consistent Equations Including Exchange and Correlation Effects
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November 1965 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Projector augmented-wave method
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December 1994 |
Generalized Gradient Approximation Made Simple
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October 1996 |
Constant Temperature Molecular Dynamics Methods
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January 1991 |
Density changes upon crystallization of Ge2Sb2.04Te4.74 films
- Njoroge, Walter K.; Wöltgens, Han-Willem; Wuttig, Matthias
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 1
https://doi.org/10.1116/1.1430249
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January 2002 |
Erratum: The role of vacancies and local distortions in the design of new phase-change materials
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February 2007 |
Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys
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June 2011 |
Structure of Phase Change Materials for Data Storage
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February 2006 |
Unique Melting Behavior in Phase-Change Materials for Rewritable Data Storage
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February 2007 |