skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Vacancy structures and melting behavior in rock-salt GeSbTe

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep25453· OSTI ID:1257766
 [1];  [2];  [3];  [2];  [4];  [1];  [3];  [4];  [5];  [6];  [1]
  1. Beijing Univ. of Technology, Beijing (China)
  2. Jilin Univ., Changchun (China)
  3. Zhejiang Univ., Hangzhou (China)
  4. Beijing Normal Univ., Beijing (China)
  5. Zhejiang Univ., Hangzhou (China); Beijing Univ. of Technology, Beijing (China)
  6. Jilin Univ., Changchun (China); Rensselaer Polytechnic Institute, Troy, NY (United States)

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) at an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.

Research Organization:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0002623
OSTI ID:
1257766
Journal Information:
Scientific Reports, Vol. 6; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 36 works
Citation information provided by
Web of Science

References (46)

Rapid‐phase transitions of GeTe‐Sb 2 Te 3 pseudobinary amorphous thin films for an optical disk memory journal March 1991
Erratum: Phase-change materials for rewriteable data storage journal November 2007
Disorder-induced localization in crystalline phase-change materials journal January 2011
Phase change materials journal February 2012
Design Rules for Phase-Change Materials in Data Storage Applications journal April 2011
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing journal June 2011
An optoelectronic framework enabled by low-dimensional phase-change films journal July 2014
Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge 2 Sb 2 Te 5 and GeTe journal December 2007
Structural role of vacancies in the phase transition of Ge 2 Sb 2 Te 5 memory materials journal September 2011
Atomistic origins of the phase transition mechanism in Ge2Sb2Te5 journal December 2009
Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material journal October 2002
Structures of stable and metastable Ge 2 Sb 2 Te 5 , an intermetallic compound in GeTe–Sb 2 Te 3 pseudobinary systems journal November 2004
Insights into the structure of the stable and metastable ( GeTe ) m ( Sb 2 Te 3 ) n compounds journal December 2008
Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory journal December 2000
Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase journal July 2000
Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals journal May 2008
Specific Heat of (GeTe) x (Sb 2 Te 3 ) 1– x Phase-Change Materials: The Impact of Disorder and Anharmonicity journal March 2014
Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films journal February 2016
Direct imaging of crystal structure and defects in metastable Ge 2 Sb 2 Te 5 by quantitative aberration-corrected scanning transmission electron microscopy journal March 2014
Understanding the phase-change mechanism of rewritable optical media journal September 2004
Building blocks of amorphous Ge 2 Sb 2 Te 5 journal August 2007
The role of vacancies and local distortions in the design of new phase-change materials journal December 2006
Octahedral structure of liquid Ge Sb 2 Te 4 alloy: First-principles molecular dynamics study journal February 2007
Density functional study of amorphous, liquid and crystalline Ge 2 Sb 2 Te 5 : homopolar bonds and/or AB alternation? journal September 2008
Local structure of liquid Ge 1 Sb 2 Te 4 for rewritable data storage use journal April 2008
Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials journal March 2008
Ultrafast phase-change logic device driven by melting processes journal September 2014
Integrated all-photonic non-volatile multi-level memory journal September 2015
Pulse number control of electrical resistance for multi-level storage based on phase change journal August 2007
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state journal July 2011
Estimation of amorphous fraction in multilevel phase-change memory cells journal September 2010
Chemically sensitive structure-imaging with a scanning transmission electron microscope journal December 1988
Role of vacancies in metal–insulator transitions of crystalline phase-change materials journal October 2012
Structural investigation of GeSb 2 Te 4 :  A high-speed phase-change material journal March 2004
In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films journal September 2006
Photoassisted amorphization of the phase-change memory alloy Ge 2 Sb 2 Te 5 journal July 2010
Self-Consistent Equations Including Exchange and Correlation Effects journal November 1965
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Projector augmented-wave method journal December 1994
Generalized Gradient Approximation Made Simple journal October 1996
Constant Temperature Molecular Dynamics Methods journal January 1991
Density changes upon crystallization of Ge2Sb2.04Te4.74 films
  • Njoroge, Walter K.; Wöltgens, Han-Willem; Wuttig, Matthias
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 1 https://doi.org/10.1116/1.1430249
journal January 2002
Erratum: The role of vacancies and local distortions in the design of new phase-change materials journal February 2007
Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys journal June 2011
Structure of Phase Change Materials for Data Storage journal February 2006
Unique Melting Behavior in Phase-Change Materials for Rewritable Data Storage journal February 2007

Cited By (10)

A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb 2 Te 3 Chalcogenide Superlattices journal August 2017
Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization journal August 2018
The Structure of Phase‐Change Chalcogenides and Their High‐Pressure Behavior journal December 2018
Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film journal July 2017
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5 journal February 2019
Dynamic reconfiguration of van der Waals gaps within GeTe–Sb 2 Te 3 based superlattices journal January 2017
Nanoscale amorphous interfaces in phase-change memory materials: structure, properties and design journal January 2020
Disordering process of GeSb 2 Te 4 induced by ion irradiation journal January 2020
A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials journal July 2017
A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials text January 2017