Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in
Journal Article
·
· Physical Review Letters
- Maria Curie-Sklodowska Univ., Lublin (Poland)
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC0207CH11358; 2014/13/B/ST5/04442
- OSTI ID:
- 1249345
- Alternate ID(s):
- OSTI ID: 1238822
- Report Number(s):
- IS-J-8964; PRLTAO
- Journal Information:
- Physical Review Letters, Vol. 116, Issue 8; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 4 works
Citation information provided by
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