Direct Observation of the E_ Resonant State in GaAs1-xBix
Journal Article
·
· Physical Review B
Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1245541
- Report Number(s):
- NREL/JA-5K00-65508
- Journal Information:
- Physical Review B, Vol. 92, Issue 24; Related Information: Physical Review, B. Condensed Matter and Materials Physics; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
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