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Title: Multiple complementary gas distribution assemblies

Patent ·
OSTI ID:1245459

In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

Research Organization:
Applied Materials, Inc., Santa Clara, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0003331
Assignee:
Applied Materials, Inc. (Santa Clara, CA)
Patent Number(s):
9,303,318
Application Number:
13/649,488
OSTI ID:
1245459
Resource Relation:
Patent File Date: 2012 Oct 11
Country of Publication:
United States
Language:
English

References (4)

Apparatus for growing single-crystalline semiconductor film patent November 1999
Method for fabricating a device on a substrate patent August 2001
Gas distribution system patent July 2005
Apparatus and Methods for Deposition of Silicon Carbide and Silicon Carbonitride Films patent-application May 2012

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