Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

doi:10.1038/srep18157

Title: Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

Journal Article · Wed Dec 16 00:00:00 EST 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep18157· OSTI ID:1245353

Malasi, A. ^[1]; Taz, H. ^[1]; Farah, A. ^[1]; Patel, M. ^[1]; Lawrie, Benjamin ^[2]; Pooser, R. ^[2]; Baddorf, A. ^[3]; Duscher, G. ^[4]; Kalyanaraman, R. ^[1]

Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

We report that ternary metal oxides of type (Me)₂O₃ with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10⁴ S/m) and Hall mobility (>30 cm²/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725; DE-NE0000693; EPS-1004083

OSTI ID:: 1245353

Journal Information:: Scientific Reports, Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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