Microwave photoresistance in an ultra-high-quality GaAs quantum well
Journal Article
·
· Physical Review B
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1242624
- Journal Information:
- Physical Review B, Vol. 93, Issue 12; ISSN 2469-9950
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 10 works
Citation information provided by
Web of Science
Web of Science
Similar Records
High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 {mu}m grown by molecular-beam epitaxy
High structural and optical quality 1.3 {mu}m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy
High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition
Journal Article
·
Mon Oct 03 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:1242624
+6 more
High structural and optical quality 1.3 {mu}m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy
Journal Article
·
Mon Oct 17 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:1242624
+5 more
High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition
Journal Article
·
Mon Jan 09 00:00:00 EST 1989
· Appl. Phys. Lett.; (United States)
·
OSTI ID:1242624
+2 more