The origins of near band-edge transitions in hexagonal boron nitride epilayers

Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4941540

Title: The origins of near band-edge transitions in hexagonal boron nitride epilayers

Journal Article · Thu Feb 04 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941540· OSTI ID:1236902

Du, X. Z. ^[1];

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Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-09ER46552

OSTI ID:: 1236902

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 5; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (38)

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