Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy

Yan, Aiming; Chen, Wei; Ophus, Colin; Ciston, Jim; Lin, Yuyuan; Persson, Kristin; Zettl, Alex

doi:10.1103/PhysRevB.93.041420

Title: Identifying different stacking sequences in few-layer CVD-grown $Mo S_{2}$ by low-energy atomic-resolution scanning transmission electron microscopy

Journal Article · Mon Jan 25 00:00:00 EST 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.93.041420· OSTI ID:1379044

Yan, Aiming ^[1]; Chen, Wei ^[2]; Ophus, Colin ^[3]; Ciston, Jim ^[3]; Lin, Yuyuan ^[4]; Persson, Kristin ^[5]; Zettl, Alex ^[1]

Univ. of California, Berkeley, CA (United States). Department of Physics and Kavli Energy NanoSciences Institute; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group; Illinois Institute of Technology, Chicago, IL (United States). Department of Mechanical, Materials and Aerospace Engineering
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy, Molecular Foundry
Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group

We present that atomically thin MoS₂ grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS₂ can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS₂ obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS₂ displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS₂. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; EDCBEE

OSTI ID:: 1379044

Alternate ID(s):: OSTI ID: 1235955

Journal Information:: Physical Review B, Vol. 93, Issue 4; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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