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Title: N-doping of organic semiconductors by bis-metallosandwich compounds

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1234678
Report Number(s):
9,231,219
14/126,319
DOE Contract Number:
FG02-07ER46467
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jun 13
Research Org:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS