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Title: N-doping of organic semiconductors by bis-metallosandwich compounds

Patent ·
OSTI ID:1234678
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The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-07ER46467
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Number(s):
9,231,219
Application Number:
14/126,319
OSTI ID:
1234678
Resource Relation:
Patent File Date: 2012 Jun 13
Country of Publication:
United States
Language:
English

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