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Title: Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1229417
Report Number(s):
BNL--111493-2015-JA
Journal ID: ISSN 0361-5235
DOE Contract Number:
SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 44; Journal Issue: 5
Publisher:
Springer
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English