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Title: Improving Electron Transport in Ga-Doped Zn0.7Mg0.3O, A Wide-Gap Band-Edge-Energy-Tunable Transparent Conducting Oxide

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1214976
Report Number(s):
NREL/CP-5K00-61339
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 8-13 June 2014, Denver, Colorado
Publisher:
Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Contributing Orgs:
Colorado School of Mines, Golden, Colorado
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS TCO; ZnMgO; Transparent Contact; Sputter; Thin Film; Transparent Conducting Oxide; ZnO