Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN lightemitting diodes using InGaN underlayers

Armstrong, A. M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jonathan J.

doi:10.1063/1.4916727

Title: Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN lightemitting diodes using InGaN underlayers

Journal Article · Tue Apr 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4916727· OSTI ID:1210504

Armstrong, A. M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jonathan J.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1210504

Journal Information:: Journal of Applied Physics, Vol. 117; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting

Country of Publication:: United States

Language:: English

References (30)

Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Lee, S. R.; Koleske, D. D.; Crawford, M. H. Journal of Crystal Growth, Vol. 355, Issue 1 https://doi.org/10.1016/j.jcrysgro.2012.06.048	journal	September 2012
Electroluminescence efficiency of blue InGaN∕GaN quantum-well diodes with and without an n-InGaN electron reservoir layer Otsuji, N.; Fujiwara, K.; Sheu, J. K. Journal of Applied Physics, Vol. 100, Issue 11 https://doi.org/10.1063/1.2398690	journal	January 2006
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs Törmä, P. T.; Svensk, O.; Ali, M. Journal of Crystal Growth, Vol. 310, Issue 23 https://doi.org/10.1016/j.jcrysgro.2008.07.031	journal	November 2008
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures: Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures Davies, Matthew J.; Massabuau, Fabien C. -P.; Dawson, Philip physica status solidi (c), Vol. 11, Issue 3-4 https://doi.org/10.1002/pssc.201300451	journal	January 2014
Measurement of deep-level spatial distributions Brotherton, S. D. Solid-State Electronics, Vol. 19, Issue 4 https://doi.org/10.1016/0038-1101(76)90033-2	journal	April 1976
Enhanced optical properties of InGaN MQWs with InGaN underlying layers Son, J. K.; Lee, S. N.; Sakong, T. Journal of Crystal Growth, Vol. 287, Issue 2 https://doi.org/10.1016/j.jcrysgro.2005.10.071	journal	January 2006
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Critical thickness calculations for InGaN/GaN Holec, D.; Costa, P. M. F. J.; Kappers, M. J. Journal of Crystal Growth, Vol. 303, Issue 1 https://doi.org/10.1016/j.jcrysgro.2006.12.054	journal	May 2007
InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers Akasaka, Tetsuya; Gotoh, Hideki; Kobayashi, Yasuyuki Applied Physics Letters, Vol. 89, Issue 10 https://doi.org/10.1063/1.2347115	journal	September 2006
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi Applied Physics Letters, Vol. 85, Issue 15 https://doi.org/10.1063/1.1804607	journal	October 2004
Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes Armstrong, A.; Henry, T. A.; Koleske, D. D. Applied Physics Letters, Vol. 101, Issue 16 https://doi.org/10.1063/1.4759003	journal	October 2012
Effect of indium doping on the transient optical properties of GaN films Kumano, Hidekazu; Hoshi, Ken-ichi; Tanaka, Satoru Applied Physics Letters, Vol. 75, Issue 19 https://doi.org/10.1063/1.125178	journal	November 1999
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures Davies, M. J.; Dawson, P.; Massabuau, F. C. -P. Applied Physics Letters, Vol. 105, Issue 9 https://doi.org/10.1063/1.4894834	journal	September 2014
Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction Nanhui, Niu; Huaibing, Wang; Jianping, Liu Solid-State Electronics, Vol. 51, Issue 6 https://doi.org/10.1016/j.sse.2007.04.007	journal	June 2007
The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells Li, T.; Wei, Q. Y.; Fischer, A. M. Applied Physics Letters, Vol. 102, Issue 4 https://doi.org/10.1063/1.4789758	journal	January 2013
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes Shen, Y. C.; Wierer, J. J.; Krames, M. R. Applied Physics Letters, Vol. 82, Issue 14 https://doi.org/10.1063/1.1566098	journal	April 2003
Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer Nanhui, Niu; Huaibing, Wang; Jianping, Liu Journal of Crystal Growth, Vol. 286, Issue 2 https://doi.org/10.1016/j.jcrysgro.2005.09.027	journal	January 2006
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering Vickers, M. E.; Kappers, M. J.; Smeeton, T. M. Journal of Applied Physics, Vol. 94, Issue 3 https://doi.org/10.1063/1.1587251	journal	August 2003
A method to determine deep level profiles in highly compensated, wide band gap semiconductors Armstrong, A.; Arehart, A. R.; Ringel, S. A. Journal of Applied Physics, Vol. 97, Issue 8 https://doi.org/10.1063/1.1862321	journal	April 2005
Performance of high-power III-nitride light emitting diodes Chen, G.; Craven, M.; Kim, A. physica status solidi (a), Vol. 205, Issue 5 https://doi.org/10.1002/pssa.200778747	journal	May 2008
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
Suppression of Nonradiative Recombination by V-Shaped Pits in $GaInN / GaN$ Quantum Wells Produces a Large Increase in the Light Emission Efficiency Hangleiter, A.; Hitzel, F.; Netzel, C. Physical Review Letters, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevLett.95.127402	journal	September 2005
Deep-level optical spectroscopy in GaAs Chantre, A.; Vincent, G.; Bois, D. Physical Review B, Vol. 23, Issue 10 https://doi.org/10.1103/PhysRevB.23.5335	journal	May 1981
Defects in epitaxial multilayers: I. Misfit dislocations Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 27, p. 118-125 https://doi.org/10.1016/S0022-0248(74)80055-2	journal	December 1974
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes Sizov, V. S.; Tsatsulnikov, A. F.; Sakharov, A. V. Semiconductors, Vol. 44, Issue 7 https://doi.org/10.1134/S106378261007016X	journal	July 2010
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes Armstrong, A.; Henry, T. A.; Koleske, D. D. Optics Express, Vol. 20, Issue S6 https://doi.org/10.1364/OE.20.00A812	journal	January 2012
Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D. Applied Physics Express, Vol. 7, Issue 3 https://doi.org/10.7567/APEX.7.032101	journal	March 2014
Defects in epitaxial multilayers Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 32, Issue 2 https://doi.org/10.1016/0022-0248(76)90041-5	journal	February 1976
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes Shen, Yu C.; Wierer, Jonathan J.; Krames, Michael R. Integrated Optoelectronic Devices 2004, SPIE Proceedings https://doi.org/10.1117/12.520571	conference	June 2004
Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 29, Issue 3, p. 273-280 https://doi.org/10.1016/0022-0248(75)90171-2	journal	July 1975

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Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods Liu, W.; Rossbach, G.; Avramescu, A. Physical Review B, Vol. 100, Issue 23 https://doi.org/10.1103/physrevb.100.235301	journal	December 2019
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues Frankerl, Christian; Hoffmann, Marc P.; Nippert, Felix Journal of Applied Physics, Vol. 126, Issue 7 https://doi.org/10.1063/1.5100498	journal	August 2019
Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes Han, Dong-Pyo; Ishimoto, Seiji; Mano, Ryoya physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900713	journal	December 2019
Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy Young, E. C.; Grandjean, N.; Mates, T. E. Applied Physics Letters, Vol. 109, Issue 21 https://doi.org/10.1063/1.4968586	journal	November 2016
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai Applied Physics Letters, Vol. 115, Issue 20 https://doi.org/10.1063/1.5127014	journal	November 2019
Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells Zhou, Renlin; Ikeda, Masao; Zhang, Feng Journal of Applied Physics, Vol. 127, Issue 1 https://doi.org/10.1063/1.5131716	journal	January 2020
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency Haller, C.; Carlin, J. -F.; Jacopin, G. Applied Physics Letters, Vol. 111, Issue 26 https://doi.org/10.1063/1.5007616	journal	December 2017
An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits Liu, Mengling; Zhao, Jie; Zhou, Shengjun Nanomaterials, Vol. 8, Issue 7 https://doi.org/10.3390/nano8070450	journal	June 2018
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells Christian, George; Kappers, Menno; Massabuau, Fabien Materials, Vol. 11, Issue 9 https://doi.org/10.3390/ma11091736	journal	September 2018
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Polyakov, A. Y.; Haller, C.; Smirnov, N. B. Journal of Applied Physics, Vol. 126, Issue 12 https://doi.org/10.1063/1.5122314	journal	September 2019
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Cao, Lina; Wang, Jingshan; Harden, Galen Applied Physics Letters, Vol. 112, Issue 26 https://doi.org/10.1063/1.5031785	journal	June 2018
Review—The Physics of Recombinations in III-Nitride Emitters David, Aurelien; Young, Nathan G.; Lund, Cory ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1 https://doi.org/10.1149/2.0372001jss	journal	January 2020
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells Haller, C.; Carlin, J. -F.; Jacopin, G. Applied Physics Letters, Vol. 113, Issue 11 https://doi.org/10.1063/1.5048010	journal	September 2018
Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence Liu, W.; Mounir, C.; Rossbach, G. Applied Physics Letters, Vol. 112, Issue 5 https://doi.org/10.1063/1.5009728	journal	January 2018
Performance improvement of InGaN-based laser grown on Si by suppressing point defects Liu, Jianxun; Wang, Jin; Sun, Xiujian Optics Express, Vol. 27, Issue 18 https://doi.org/10.1364/oe.27.025943	journal	January 2019

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Title: Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN lightemitting diodes using InGaN underlayers

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