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Title: Evidence of extreme type-III band offset at buried n -type CdO / p -type SnTe interfaces

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; AC02-98CH10886
OSTI ID:
1182204
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 91 Journal Issue: 20; ISSN 1098-0121
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

References (36)

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Bandgap and effective mass of epitaxial cadmium oxide journal January 2008
Growth and valence band offset measurement of PbTe/InSb heterojunctions journal January 2012
(Invited) Heterostructures for Everything: Device Principle of the 1980's? journal January 1981
Electron mobilities in modulation‐doped semiconductor heterojunction superlattices journal October 1978
Looking 100 Å deep into spatially inhomogeneous dilute systems with hard x-ray photoemission journal January 2004
Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory journal September 2011
Mechanism of Fermi-level stabilization in semiconductors journal March 1988
Soft X-ray characterization of Zn1−xSnxOy electronic structure for thin film photovoltaics journal January 2012
Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions journal July 2006
Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide journal September 2013
Study of interfaces chemistry in type-II GaSb/InAs superlattice structures journal November 2012
Characterization of electrochemically reduced dicadmium stannate journal July 1988
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations journal January 2009
Dopant-induced band filling and bandgap renormalization in CdO : In films journal April 2013
XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films journal June 2011
Energy level alignment at metal/organic semiconductor interfaces: “Pillow” effect, induced density of interface states, and charge neutrality level journal April 2007
Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states journal May 2006
Direct evidence of metallicity at ZnO ( 000 1 ¯ ) ( 1 × 1 ) surfaces from angle-resolved photoemission spectroscopy journal June 2010
X-ray photoemission studies of the electronic structure of single-crystalline CdO(100) journal July 2007
Band offsets in complex-oxide thin films and heterostructures of SrTiO 3 /LaNiO 3 and SrTiO 3 /GdTiO 3 by soft and hard X-ray photoelectron spectroscopy journal April 2013
Photoelectron spectroscopy study of surface oxidation of SnTe PbTe and PbSnTe journal July 1984
Effects of the narrow band gap on the properties of InN journal November 2002
Origin of the n-type conductivity of InN: The role of positively charged dislocations journal June 2006
Surface hole accumulation and Fermi level stabilization energy in SnTe journal August 2014
XPS study of SnTe(100) oxidation by molecular oxygen journal June 2005
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy journal October 2008
Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces journal September 2014

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