Understanding the role of silicon oxide shell in oxide-assisted SiNWs growth

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Materials Chemistry and Physics

DOI:https://doi.org/10.1016/j.matchemphys.2014.09.036· OSTI ID:1166925

Wu, Shunqing ^[1]; Wang, Cai-Zhuang Z ^[1]; Zhu, Z Z ^[2]; Ho, Kai-Ming ^[1]

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1. Ames Laboratory
2. Xiamen University

The role of silicon oxide shell in oxide-assisted SiNWs growth is studied by performing ab initio molecular dynamics simulations on the structural and dynamical properties of the interface between crystalline Si(111) surface and disorder SiO thin film. Si atoms in the SiO film tends to aggregate into the vicinity of the Si(111)/SiO interface. In addition, the diffusion of Si atoms at the interface is anisotropic - the diffusion along the interface is several times faster than that perpendicular to the interface. The segregation and anisotropic diffusion of Si atoms at the Si(111)/SiO interface shed interesting light into the mechanism of oxide-assisted silicon nanowire growth.

• Research Organization: Ames Lab., Ames, IA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC02-07CH11358
• OSTI ID: 1166925
• Report Number(s): IS-J 8526
• Journal Information: Materials Chemistry and Physics, Vol. 148, Issue 3; ISSN 0254-0584
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Growth mechanism
Anisotropic diffusion
Silicon nanowire
Oxide-assisted growth
Ab initio molecular dynamics