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Title: Understanding the role of silicon oxide shell in oxide-assisted SiNWs growth

The role of silicon oxide shell in oxide-assisted SiNWs growth is studied by performing ab initio molecular dynamics simulations on the structural and dynamical properties of the interface between crystalline Si(111) surface and disorder SiO thin film. Si atoms in the SiO film tends to aggregate into the vicinity of the Si(111)/SiO interface. In addition, the diffusion of Si atoms at the interface is anisotropic - the diffusion along the interface is several times faster than that perpendicular to the interface. The segregation and anisotropic diffusion of Si atoms at the Si(111)/SiO interface shed interesting light into the mechanism of oxide-assisted silicon nanowire growth.
 [1] ;  [1] ;  [2] ;  [1]
  1. Ames Laboratory
  2. Xiamen University
Publication Date:
OSTI Identifier:
Report Number(s):
IS-J 8526
Journal ID: ISSN 0254-0584
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Chemistry and Physics; Journal Volume: 148; Journal Issue: 3
Research Org:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
36 MATERIALS SCIENCE; Growth mechanism; Anisotropic diffusion; Silicon nanowire; Oxide-assisted growth; Ab initio molecular dynamics