Investigation of Single Crystal 4H-SiC Growth by the Solvent¿Laser Heated Floating Zone Technique

Journal Article · Tue Apr 01 00:00:00 EDT 2014 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.01.050· OSTI ID:1162692

Woodworth, A.; Neudeck, P.; Sayir, A.; Sola, F.; Dudley, M.; Raghothamachar, B.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1162692
• Report Number(s): BNL-106638-2014-JA
• Journal Information: Journal of Crystal Growth, Vol. 392; ISSN 0022-0248
• Country of Publication: United States
• Language: English