Angular Distribution and Recoil Effect for 1 MeV Au+ Ions through a Si3N4 Thin Foil
- Univ. of Tennessee, Knoxville, TN (United States)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
The Stopping and Range of Ions in Matter (SRIM) code has been widely used to predict nuclear stopping power and angular distribution of ion-solid collisions. However, experimental validation of the predictions is insufficient for slow heavy ions in nonmetallic compounds. In this work, time-of-flight secondary ion mass spectrometry (ToF-SIMS) is applied to determine the angular distribution of 1 MeV Au ions after penetrating a Si3N4 foil with a thickness of ~100 nm. The exiting Au ions are collected by a Si wafer located ~14 mm behind the Si3N4 foil, and the resulting 2-dimensional distribution of Au ions on the Si wafer is measured by ToF-SIMS. The SRIM-predicted angular distribution of Au ions through the Si3N4 thin foil is compared with the measured results, indicating that SRIM slightly overestimates the nuclear stopping power by up to 10%. In addition, thickness reduction of the suspended Si3N4 foils induced by 1 MeV Au ion irradiation is observed with an average loss rate of ~107 atom/ion.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1158468
- Report Number(s):
- PNNL-SA-98255; 47459; KP1704020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Vol. 332; ISSN 0168-583X
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
Similar Records
MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate
MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate