Environmentally-assisted technique for transferring devices onto non-conventional substrates
Patent
·
OSTI ID:1151764
A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.
- Research Organization:
- Leland Stanford Junior University, Palo Alto, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0001060
- Assignee:
- Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
- Patent Number(s):
- 8,815,707
- Application Number:
- 13/791,214
- OSTI ID:
- 1151764
- Country of Publication:
- United States
- Language:
- English
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